PART |
Description |
Maker |
X28HC256J-12 X28HC256 |
156K high speed CMOS EEPROM (32K X 8) x8EEPROM
|
Xicor
|
HY29F400BT-55 HY29F400BR-90 HY29F400BT-70 HY29F400 |
x8/x16 Flash EEPROM 256K X 16 FLASH 5V PROM, 90 ns, PDSO48 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory 4兆位12Kx8/256Kx16伏只闪存 x8/x16 Flash EEPROM 256K X 16 FLASH 5V PROM, 45 ns, PDSO48
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
HY29F080G-70 HY29F080G-12 HY29F080T-70 HY29F080R-9 |
x8 Flash EEPROM 1M X 8 FLASH 5V PROM, 90 ns, PDSO40 8 Megabit (1M x 8), 5 Volt-only, Flash Memory 8兆位米8),5伏只,闪
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
CAT28F010TRI-70T CAT28F010N-90T CAT28F010P-15 CAT2 |
128K X 8 FLASH 12V PROM, 70 ns, PDIP32 PLASTIC, DIP-32 1 Megabit CMOS Flash Memory(79.65 k) 1兆位的CMOS快闪记忆体(79.65十一 x8 Flash EEPROM x8闪存EEPROM
|
Ironwood Electronics NXP Semiconductors N.V. Microchip Technology, Inc. ON SEMICONDUCTOR
|
W541E201 W541E202 W541E203 W541E204 W541E205 W541E |
W541C201 w 2Kx16 Flash EEPROM version 4 BIT FLASH EPROM MICROCONTROLLER
|
Winbond Electronics
|
AS29LV400 AS29LV400B-70TC AS29LV400B-70TI AS29LV40 |
3V 512K x 8/256K x 16 CMOS flash EEPROM, 700ns access time 3V 512K x 8/256K x16 CMOS Flash EEPROM
|
Alliance Semiconductor List of Unclassifed Manufacturers
|
X28HC256P-12 X28HC256P-15 X28HC256J-90 X28HC256S-1 |
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 150 ns, PDSO28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 120 ns, CPGA28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CQCC32 SWITCH SLIDE 2MM HORIZONTAL SMD 32K X 8 EEPROM 5V, 90 ns, CDIP28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CDIP28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDIP28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDIP28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDSO28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDSO28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDIP28 RACK DESK SOLID BLACK 1.75X19X8,1 32K X 8 EEPROM 5V, 70 ns, CPGA28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PQCC32 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CPGA28 Continuity Tester RoHS Compliant: NA 32K X 8 EEPROM 5V, 90 ns, PQCC32 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PQCC32 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDFP28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CQCC32 Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 1000uF; Voltage: 50V; Case Size: 12.5x25 mm; Packaging: Bulk
|
Intersil, Corp. Intersil Corporation
|
SST39VF016-70-4C-B2K SST39VF080-90-4I-B2K SST39VF0 |
x8 Flash EEPROM 4-Mbit (256K x 16) Static RAM CYRF6936 - WirelessUSB™ LP 2.4 GHz Radio SoC IC SRAM 32KX8 3.0V LP 28-SOIC 20-, 40-, and 60-Bit I/O Expander with EEPROM x8闪存EEPROM
|
Silicon Storage Technology, Inc.
|
SST29EE010-70-4C-UH SST29VE010-70-4C-UH SST29LE010 |
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PQCC32 1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PDSO32 1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8)页模式EEPROM 1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 90 ns, PQCC32 1 Mbit (128K x8) Page-Mode EEPROM 1兆位128K的8)页模式的EEPROM 1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8)页模式的EEPROM 1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 2.7V PROM, 200 ns, PDSO32
|
Silicon Storage Technology, Inc. SILICON STORAGE TECHNOLOGY INC
|
PUMA2F16006M-90 PUMA2F16006-90 PUMA2F16006M-120E P |
32-Tap, Volatile DPP with I2C/DEC, Up/Down Interface, TSSOP BGA, ROHS-A, IND TEMP, T&R(ARM) BGA,GREEN,IND TEMP,T&R(ARM) x32 Flash EEPROM Module X32号,闪存EEPROM模块 EEPROM EEPROM
|
Infineon Technologies AG Amphenol Tuchel
|
P28F010 28F010 29066301 |
IC,EEPROM,FLASH,128KX8,CMOS,DIP,32PIN,PLASTIC 5 Volt Bulk Erase Flash Memory From old datasheet system
|
intel
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